SiC high voltage SBD
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SiC high voltage SBD
Vim tias qhov siab thiab qhov tseem ceeb ntawm qhov hluav taws xob ntawm Si thiab GaAs qis dua li ntawm broadband semiconductor, qhov hluav taws xob tawg thiab thim rov qab ntawm SBD ua los ntawm Si thiab GaAs qis dua thiab loj dua. Cov khoom siv Silicon carbide (SIC) muaj qhov sib txawv ntawm qhov dav (2.2ev-3.2ev), lub siab tseem ceeb tawg hluav taws xob (2V / cm-4 × 106v / cm), siab saturation ceev (2 × 107cm / s), lub thermal conductivity ntawm 4.9w / (cm · K), muaj zog chemical corrosion kuj, siab hardness, thiab ib tug kuj mature khoom npaj thiab raug txheej txheem. Nws yog ib qho khoom siv tshiab zoo tshaj plaws rau kev ua SBD nrog kev ua haujlwm siab, tsis tshua muaj hluav taws xob poob qis thiab kev hloov pauv ceev.
Xyoo 1999, Purdue University hauv Tebchaws Meskas tau tsim 4.9kv SiC Power SBD hauv Muri qhov project tau txais nyiaj los ntawm Tebchaws Meskas Navy, uas ua rau muaj kev cuam tshuam tseem ceeb hauv SBD voltage tiv thaiv lub zog rau pem hauv ntej thiab thim rov qab tam sim no ntawm SBD ncaj qha cuam tshuam rau lub zog poob. ntawm SBD rectifier thiab qhov system efficiency. Nws yog qhov tsis sib haum xeeb uas tsis tshua muaj hluav taws xob rau pem hauv ntej yuav tsum tau qis Schottky barrier qhov siab thiab siab rov qab tawg voltage yuav tsum tau siab barrier qhov siab li sai tau. Yog li ntawd, kev xaiv ntawm barrier hlau yog ib qho tseem ceeb heev vim hais tias nws yuav tsum raug xam tias yog ib qho kev sib haum xeeb. Ni thiab Ti yog zoo tagnrho Schottky barrier hlau rau n-hom SiC. Vim tias qhov barrier qhov siab ntawm Ni / SiC siab dua li ntawm Ti / SiC, qhov qub tau qis dua rov qab xau tam sim no thiab tom kawg muaj me me rau pem hauv ntej voltage poob. Txhawm rau kom tau txais sicsbd nrog qis qis rau pem hauv ntej thiab rov qab xau tam sim no, tus tsim ntawm sicsbd nrog Ni tiv tauj thiab Ti tiv tauj thiab siab / qis barrier bimetal zawj (DMT) qauv yog ua tau. Nrog rau cov qauv no, qhov thim rov qab xau tam sim no ntawm sicsbd yog 75 npaug me dua li ntawm cov phiaj xwm Ti Schottky rectifier ntawm 300V thim rov qab kev tsis ncaj ncees, thiab cov xau tam sim no zoo ib yam li ntawm nisbd. Siv 6h sicsbd nrog lub nplhaib tiv thaiv, qhov hluav taws xob tawg yog mus txog 550V.
Raws li cov lus ceeb toom, cmzetteling li al. Epitaxed 10 μ m n-hom txheej ntawm 6h SiC substrate, thiab tom qab ntawd tsim cov kab sib luag P + strips los ntawm ion implantation. Sab saum toj barrier hlau yog ti. Cov qauv no zoo ib yam li cov khoom siv hluav taws xob sib txuas Schottky (JBS) hauv daim duab 2. Cov yam ntxwv rau pem hauv ntej yog tib yam li Ti Schottky barrier, thiab qhov thim rov qab tam sim no yog nyob nruab nrab ntawm PN thiab Ti Schottky barrier, nyob rau hauv lub xeev kev tiv thaiv ntom ntom yog 20 m Ω· cm2, qhov thaiv qhov hluav taws xob yog 1.1 kV, thiab cov xau tam sim no ntom ntom yog 10 μ A / cm2 hauv qab 200 V thim rov qab. Tsis tas li ntawd, R. rayhunathon tau tshaj tawm cov txiaj ntsig ntawm kev loj hlob ntawm p-type 4H? Sicsbd thiab 6h? Sicsbd. Qhov rov qab tawg voltage ntawm p-hom 4h-sicsbd thiab 6h-sicsbd nrog Ti raws li cov hlau thaiv yog 600V thiab 540V raws li, thiab cov xau tam sim no ntom ntom hauv qab 100V thim rov qab tsis zoo yog tsawg dua 0.1 μ A / cm2 (25 degree).
SiC yog cov khoom siv zoo tshaj plaws los ua cov khoom siv hluav taws xob semiconductor. Lub Tsib Hlis 4, 2000, Cree ntawm Tebchaws Meskas thiab Kansai Hluav Taws Xob Hluav Taws Xob Tuam Txhab ntawm Nyij Pooj tau tshaj tawm txoj kev vam meej ntawm 12.3kv SiC fais fab diodes, nrog rau pem hauv ntej voltage poob ntawm VF ntawm 4.9v ntawm qhov ceev tam sim no ntawm 100A / cm2. Qhov no qhia tau hais tias lub zog loj ntawm SiC cov khoom siv los ua lub zog diodes.
Hauv SBD, cov khoom siv nrog SiC thiab JBS qauv muaj peev xwm txhim kho tau zoo. Nyob rau hauv lub tshav pob ntawm high-voltage hwj chim diodes, SBD yuav twv yuav raug hu nyob ib qho chaw.